NON-VOLATILE MEMORY DEVICE AND SENSING METHOD THEREOF

According to an aspect of a technical idea of the present disclosure, provided is a sensing method of a nonvolatile memory apparatus which includes multi-level cells. The sensing method of the nonvolatile memory apparatus comprises the following steps: precharging a bit line and a sense-out node dur...

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Bibliographische Detailangaben

Hauptverfasser:	BYEON DAE SEOK, LEE CHEON AN, YU CHUNG HO, BANG JIN BAE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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