SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

In order to prevent cracks from occurring at the corner of a semiconductor die after bonding the semiconductor die to another substrate, an opening is formed adjacent to the corner of the semiconductor die. The opening is filled and overcharged with a cushioning material having physical properties b...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHIH YING CHING, LI PAI YUAN, WU CHIH WEI, LEE LONG HUA, HUANG SUNG HUI, KUO LI CHUNG, HUANG KUAN YU
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In order to prevent cracks from occurring at the corner of a semiconductor die after bonding the semiconductor die to another substrate, an opening is formed adjacent to the corner of the semiconductor die. The opening is filled and overcharged with a cushioning material having physical properties between the physical properties of an underfill material disposed adjacent the cushioning material and the physical properties of the semiconductor die. It is possible to solve problems associated with the bonding and operation of components as device size decreases. 반도체 다이를 다른 기판에 본딩한 후에 반도체 다이의 코너에서 균열이 발생하는 것을 막기 위해, 개구부가 반도체 다이의 코너에 인접하여 형성되고, 그 개구부는 완충재에 인접하여 배치되는 언더필 재료의 물리적 특성과 반도체 다이의 물리적 특성 사이의 물리적 특성을 지닌 완충재로 충전되고 과충전된다.