SEMICONDUCTOR DEVICE AND METHOD

Provided are a device in which a first opening is formed within a substrate, and a manufacturing process thereof. The first opening is reshaped into a second opening using a second etching process. The second etching process is performed through radical etching in which neutral ions are utilized. Ac...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YOUNG BO FENG, CHANG CHE CHENG, WU PO CHI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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