SEMICONDUCTOR DEVICE AND METHOD

Provided are a device in which a first opening is formed within a substrate, and a manufacturing process thereof. The first opening is reshaped into a second opening using a second etching process. The second etching process is performed through radical etching in which neutral ions are utilized. Ac...

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Bibliographische Detailangaben
Hauptverfasser:	YOUNG BO FENG, CHANG CHE CHENG, WU PO CHI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Provided are a device in which a first opening is formed within a substrate, and a manufacturing process thereof. The first opening is reshaped into a second opening using a second etching process. The second etching process is performed through radical etching in which neutral ions are utilized. Accordingly, substrate push is reduced. 제1 개구부가 기판 내에 형성되어 있는 디바이스 및 그 제조 공정이 제공된다. 제1 개구부는 제2 에칭 공정을 이용하여 제2 개구부로 재성형된다. 제2 에칭 공정은 중성 이온을 사용하는 라디칼 에칭에 의해 수행된다. 이 경우, 기판 푸시(substrate push)가 감소한다.