SILICON NANOWIRES FORMED BETWEEN TOP AND BOTTOM OF MICROSCALE SENSOR STRUCTURES AND MANUFACTURING METHOD THEREOF

Embodiments relate to a method of manufacturing a nanowire disposed between a top and a bottom of a microscale sensor structure, including: a step (S100) of forming a first oxide film on a silicon substrate; a step (S200) of etching the silicon substrate by using the first oxide film as a mask, such...

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Bibliographische Detailangaben
Hauptverfasser:	CHO, DONG IL, YOO, HYUNG JUNG, SHIN, JONG YOON, JANG, SEO HYEONG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MANUFACTURE OR TREATMENT THEREOF MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES MICROSTRUCTURAL TECHNOLOGY NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	Embodiments relate to a method of manufacturing a nanowire disposed between a top and a bottom of a microscale sensor structure, including: a step (S100) of forming a first oxide film on a silicon substrate; a step (S200) of etching the silicon substrate by using the first oxide film as a mask, such that a recessed region for dividing a nano-column structure and the microscale sensor structure is formed; a step (S300) of forming a second oxide film on the silicon substrate through a thermal oxidation process; a step (S400) of further etching the recessed region by a predetermined depth in a vertical direction; a step (S500) of forming a third oxide film on the silicon substrate through the thermal oxidation process; and a step (S600) of etching the silicon substrate such that floating nanowires are formed as a bottom of the nano-column structure is removed. Accordingly, a residual stress applied to both ends of the nanowire is reduced. 실시예들은 실리콘 기판 상에 제1 산화막을 형성하는 단계(S100), 제1 산화막을 마스크로 이용하여, 나노 칼럼 구조물과 마이크로 스케일 센서 구조물을 구분하는 함몰영역이 생성되도록 실리콘 기판을 식각하는 단계(S200), 실리콘 기판에 열산화 공정을 통해 제2 산화막을 형성하는 단계(S300), 상기 함몰영역을 수직방향으로 소정 깊이 추가 식각하는 단계(S400), 실리콘 기판에 열산화 공정을 통해 제3 산화막을 형성하는 단계(S500), 상기 나노 칼럼 구조물의 하단이 제거되면서 부유된 나노 와이어가 생성되도록, 상기 실리콘 기판을 식각하는 단계(S600)를 포함하는 마이크로 스케일 센서 구조물의 상단과 하단 사이에 위치하는 나노 와이어 제조방법에 관련된다.