Methods of plasma enhanced atomic layer depositing silicon thin film containing nitrogen and methods of double patterning semiconductor device

The present invention provides a plasma atomic layer deposition method of a silicon thin film containing nitrogen to perform a unit cycle at least once. A unit cycle comprises: a first step of supplying silylene ([1,3-bis(1,1-dimethylethyl)-4,4-dimethyl-1,3-diaza-2 silacyclopent-2-ylidene, tBu_Si])...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	PARK, KUN WOO, PARK, JUNG WOO, YUN, SU HYONG, PARK, HYUNG SANG, YOON, TAE HO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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