Methods of plasma enhanced atomic layer depositing silicon thin film containing nitrogen and methods of double patterning semiconductor device
The present invention provides a plasma atomic layer deposition method of a silicon thin film containing nitrogen to perform a unit cycle at least once. A unit cycle comprises: a first step of supplying silylene ([1,3-bis(1,1-dimethylethyl)-4,4-dimethyl-1,3-diaza-2 silacyclopent-2-ylidene, tBu_Si])...
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Format: | Patent |
Sprache: | eng ; kor |
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Zusammenfassung: | The present invention provides a plasma atomic layer deposition method of a silicon thin film containing nitrogen to perform a unit cycle at least once. A unit cycle comprises: a first step of supplying silylene ([1,3-bis(1,1-dimethylethyl)-4,4-dimethyl-1,3-diaza-2 silacyclopent-2-ylidene, tBu_Si]) as a source gas to a reactor charged with the substrate to adsorb the silylene on the substrate; and a second step of generating a plasma containing nitrogen (N) in the reactor to form a silicon unit film containing nitrogen on the substrate.
본 발명은 기판이 장입된 반응기에 소스 기체로서 실릴렌([1,3-bis(1,1-dimethylethyl)-4,4-dimethyl-1,3-diaza-2 silacyclopent-2-ylidene, tBu_Si])을 공급하여 상기 기판에 흡착시키는 제 1 단계; 및 상기 반응기 내에 질소(N) 성분을 함유하는 플라즈마를 발생시켜 상기 기판 상에 질소를 함유하는 실리콘 단위막을 형성하는 제 2 단계; 를 포함하는 단위사이클을 적어도 1회 이상 수행하는 질소를 함유하는 실리콘 박막의 플라즈마 원자층 증착 방법을 제공한다. |
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