Method for forming fine pattern using conductive particles

The present invention relates to a method for fine patterning of conductive particles, which comprises the following steps: (S10) forming a mask pattern using mask particles on a base substrate; and forming a metal pattern on the base substrate on which the mask pattern is formed by selectively atta...

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Bibliographische Detailangaben
Hauptverfasser:	KIM, JAE HO, PARK, JEUNG KYUN, KIM, HYO SOP, JEONG, SEONG HYEON, CHOI, MI YEON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention relates to a method for fine patterning of conductive particles, which comprises the following steps: (S10) forming a mask pattern using mask particles on a base substrate; and forming a metal pattern on the base substrate on which the mask pattern is formed by selectively attaching metal particles to regions other than a mask pattern region (S30). Provided is the method for fine patterning of the conductive particles, which can reduce material cost and production cost by allowing most of the metal particles to contribute to metal pattern formation. 본 발명은 베이스 기판 상에 마스크 입자를 이용하여 마스크 패턴을 형성하는 단계(S10); 상기 마스크 패턴이 형성된 베이스 기판에 상기 마스크 패턴 영역 이외의 영역에 금속 입자를 선택적으로 부착시켜 금속 패턴을 형성하는 단계(S30);를 포함하는 도전입자의 미세 패터닝 방법으로서, 대부분의 금속 입자가 금속 패턴 형성에 기여하도록 함으로써 재료비용을 절감하여 생산비용을 감소시킬 수 있는 도전입자의 미세 패터닝 방법을 제공한다.