PHOTODIODE WITH DECREASED DARK CURRENT AND METHOD FOR MANUFACTURING THE SAME

The present invention relates to a photodiode with decreased dark currents and a manufacturing method thereof. More specifically, the photodiode comprises: a semiconductor layer; a first contact unit disposed in a first region of the semiconductor layer and including an interlayer and one or more me...

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Bibliographische Detailangaben
Hauptverfasser:	ZANG, HWAN JUN, YU, HYUN YONG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a photodiode with decreased dark currents and a manufacturing method thereof. More specifically, the photodiode comprises: a semiconductor layer; a first contact unit disposed in a first region of the semiconductor layer and including an interlayer and one or more metal layers; a second contact unit disposed in a second region of a semiconductor and including one or more metal layers; and an active region disposed between the first and second contact units. The first contact unit and the second contact unit are asymmetric. 본 발명은 암전류가 감소된 포토 다이오드 및 이의 제조 방법에 관한 것으로서, 보다 구체적으로 반도체층, 반도체층의 제1영역에 배치되며 중간층과 하나 이상의 금속층을 포함하는 제1컨택부, 반도체의 제2영역에 배치되며 하나 이상의 금속층을 포함하는 제2컨택부, 제1컨택부 및 제2컨택부 사이에 배치되는 액티브 영역을 포함하며, 상기 제1컨택부 및 상기 제2컨택부는 비대칭인 포토 다이오드 및 이를 제조하는 방법에 관한 것이다.