MANUFACTURING METHOD OF PHOTOMASK BLANK PHOTOMASK BLANK MANUFACTURING METHOD OF PHOTOMASK PHOTOMASK AND CHROME METAL TARGET

According to the present invention, a photomask blank comprises a transparent substrate, a silicon-containing film and a chromium-containing film which are brought into contact with each other, or a chromium-containing film which is brought into contact with the transparent substrate. The chromium-c...

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Bibliographische Detailangaben
Hauptverfasser:	INAZUKI YUKIO, SASAMOTO KOHEI, YURI TSUTOMU
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	According to the present invention, a photomask blank comprises a transparent substrate, a silicon-containing film and a chromium-containing film which are brought into contact with each other, or a chromium-containing film which is brought into contact with the transparent substrate. The chromium-containing film is formed of a silicon-containing material selected from: a silicon compound consisting of silicon only, or one or more light elements selected from oxygen, nitrogen and carbon along with silicon; and a transition metal silicon compound consisting of one or more transition metals selected from titanium, vanadium, cobalt, nickel, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten, and one or more light elements selected from silicon, oxygen, nitrogen and carbon. The chromium-containing film of the photomask blank is formed by sputtering using a chromium metal target containing 1 mass ppm or less of silver, wherein the chromium-containing film is formed of a chromium-containing material. According to the present invention, generation of defects in the silicon-containing film is reduced although the photomask is repeatedly used in pattern exposure performed by Arf excimer laser beam or the like. 본 발명은, 투명 기판과, 서로 접하는 규소 함유막 및 크롬 함유막 또는 투명 기판과 접하는 크롬 함유막을 포함하고, 규소 함유막이, 규소만, 규소와, 산소, 질소 및 탄소로부터 선택되는 1종 이상의 경원소로 이루어지는 규소 화합물, 및 티탄, 바나듐, 코발트, 니켈, 지르코늄, 니오브, 몰리브덴, 하프늄, 탄탈 및 텅스텐으로부터 선택되는 1종 이상의 전이 금속과, 규소와, 산소, 질소 및 탄소로부터 선택되는 1종 이상의 경원소로 이루어지는 전이 금속 규소 화합물로부터 선택되는 규소 함유 재료로 구성되고, 크롬 함유막이, 크롬 함유 재료로 구성된 포토마스크 블랭크의 크롬 함유막을, 은의 함유율이 1질량ppm 이하인 크롬 금속 타겟을 이용한 스퍼터링에 의해 성막한다. 본 발명에 의하면, ArF 엑시머 레이저광 등에 의한 패턴 노광에, 포토마스크를 반복하여 이용한 경우라도, 규소를 함유하는 막의 결함의 발생이 저감된다.