PREPARATION METHOD OF OXIDE SEMICONDUCTOR THIN FILM

The present invention relates to a method of manufacturing an oxide semiconductor thin film. The method includes a step of forming an oxide semiconductor; a step of performing low-temperature treatment on a substrate having the oxide semiconductor in a vacuum atmosphere; and a step of injecting mois...

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Bibliographische Detailangaben
Hauptverfasser:	AHN, CHEOL HYOUN, KIM, YONG HOON, KIM, YE KYUN, KANG, WON JUN, CHO, HYUNG KOUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CONDUCTORS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INSULATORS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a method of manufacturing an oxide semiconductor thin film. The method includes a step of forming an oxide semiconductor; a step of performing low-temperature treatment on a substrate having the oxide semiconductor in a vacuum atmosphere; and a step of injecting moisture into the vacuum atmosphere. The step of performing low-temperature treatment in the vacuum atmosphere and the step of injecting moisture are repeatedly performed. It is possible to remove excessive moisture or impurities in the thin film. 산화물 반도체를 형성하는 단계; 상기 산화물 반도체가 형성된 기판을 진공 분위기 하에서 저온 처리 하는 단계; 상기 진공 분위기 상태에 수분을 주입하는 단계;를 포함하고, 상기 진공 분위기 하에서 저온 처리하는 단계 및 상기 수분을 주입하는 단계를 반복적으로 수행하는 것을 포함하는, 산화물 반도체 박막의 제조방법에 관한 것이다.