DEVICE FOR DETECTING LEAKAGE CURRENT AND MEMORY DEVICE
According to an embodiment of the present invention, a leakage current sensing device includes an oscillator for outputting an operation clock signal with a first frequency, a charge pump for generating driving power for driving a plurality of memory cells by operating according to the operation clo...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | According to an embodiment of the present invention, a leakage current sensing device includes an oscillator for outputting an operation clock signal with a first frequency, a charge pump for generating driving power for driving a plurality of memory cells by operating according to the operation clock signal, and a counter circuit for generating comparison data for detecting a leakage current included in the driving power by detecting a frequency of the operation clock signal. Accordingly, the present invention can increase the operation reliability and stability of a memory device.
본 발명의 일 실시예에 따른 누설 전류 감지 장치는, 제1 주파수를 갖는 동작 클럭 신호를 출력하는 오실레이터, 상기 동작 클럭 신호에 따라 동작하여 복수의 메모리 셀들을 구동하기 위한 구동 전원을 생성하는 차지 펌프, 및 상기 동작 클럭 신호의 주파수를 검출하여 상기 구동 전원에 포함된 누설 전류를 감지하기 위한 비교 데이터를 생성하는 카운터 회로를 포함한다. |
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