SEMICONDUCTOR DEVICE AND METHOD MANUFACTURING THE SAME

A semiconductor device according to an embodiment of the present invention includes an n- type layer located on a first side of an n+ type silicon carbide substrate, a trench located in the n- type layer, a first gate electrode and a second gate electrode located in the trench and separated from eac...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	CHUN, DAE HWAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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