COMPOSITION FOR FORMING SILICA LAYER METHOD FOR MANUFACTURING SILICA LAYER AND ELECTRIC DEVICE INCLUDIMG SILICA LAYER

The present invention relates to a composition for forming a silica film, containing a silica-containing polymer and a solvent. The weight average molecular weight of the silica-containing polymer is 2,000 to 100,000, and a branching rate (a) of the silica-containing polymer calculated by an equatio...

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Bibliographische Detailangaben
Hauptverfasser: KIM, YONG GOOG, SIM, SOO YEON, BAE, JIN HEE, KIM, JIN GYO, NOH, KUN BAE, LEE, JI HO, HWANG, BYEONG GYU, YUN, HUI CHAN, KWAK, TAEK SOO
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:The present invention relates to a composition for forming a silica film, containing a silica-containing polymer and a solvent. The weight average molecular weight of the silica-containing polymer is 2,000 to 100,000, and a branching rate (a) of the silica-containing polymer calculated by an equation 1 is 0.25 to 0.50, wherein the equation 1 is represented by η=k·M^a. In the equation 1, η refers to an intrinsic viscosity of the silicon-containing polymer, M is the absolute molecular weight of the silicon-containing polymer, a is the branching rate, and k is a unique constant. 규소 함유 중합체, 그리고 용매를 포함하는 실리카 막 형성용 조성물로서, 상기 규소 함유 중합체의 중량평균분자량은 2,000 내지 100,000이고, 하기 식 1에 의거하여 산출한 상기 규소 함유 중합체의 분지율(a)이 0.25 내지 0.50인 실리카 막 형성용 조성물: [식 1] η=k·M상기 식 1에서, η은 규소 함유 중합체의 고유점도이고, M은 규소 함유 중합체의 절대분자량이고, a는 분지율이고, k는 고유상수이다.