SILICON NITRIDE LAMINATED FILM ORGANIC ELECTROLUMINESCENCE ELEMENT ELECTRONIC PAPER AND OPTICAL ADJUSTMENT FILM AND METHOD FOR MANUFACTURING SILICON NITRIDE LAMINATED FILM

The present invention relates to a silicon nitride laminated film having sufficient gas barrier property and small warpage. According to the present invention, the film comprises: a flexible base material; and one thin film layer or a plurality of thin film layers formed at least one surface of the...

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Bibliographische Detailangaben
Hauptverfasser:	KAWAKAMI NOBUYUKI, OKIMOTO TADAO, ISOMURA YOSHIYUKI, JIKO NORIHIRO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	The present invention relates to a silicon nitride laminated film having sufficient gas barrier property and small warpage. According to the present invention, the film comprises: a flexible base material; and one thin film layer or a plurality of thin film layers formed at least one surface of the flexible base material. Moreover, at least one thin film layer of the one thin film layer or the plurality of thin film layers contains silicon, nitrogen, and hydrogen. In addition, a hydrogen distribution curve for representing the relationship between the position in the film thickness direction and the contents of hydrogen atoms in the specific thin film layer has at least one maximum point and at least one minimum point. 본 발명은, 충분한 가스 배리어성을 가지면서 휨이 작은 질화규소 적층 필름을 제공하는 것을 과제로 한다. 본 발명에 따른 질화규소 적층 필름은, 플렉시블 기재와, 상기 플렉시블 기재의 적어도 한쪽 표면에 형성된 하나 또는 복수의 박막층을 구비하는 질화규소 적층 필름이며, 상기 하나 또는 복수의 박막층 중 적어도 하나의 특정 박막층이 규소, 질소 및 수소를 함유하고, 상기 특정 박막층 내의 막 두께 방향 위치와 수소 원자의 함유량의 관계를 나타내는 수소 분포 곡선이 적어도 하나의 극대점 및 적어도 하나의 극소점을 갖는 것을 특징으로 한다.