method of manufacturing an organic metal amine compound

The present invention relates to a method for producing an organometallic amine compound which is a precursor of a group 13 organometallic thin film applied to a thin film for transistor oxide semiconductors in semiconductors and displays. To this end, the method for producing the organometallic ami...

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Bibliographische Detailangaben
Hauptverfasser: LIM, JIN MOOK, YANG, IL DOO, JUNG, SUNG MOON, KIM, JIN DONG, KIM, HEE CHUL
Format: Patent
Sprache:eng ; kor
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Beschreibung
Zusammenfassung:The present invention relates to a method for producing an organometallic amine compound which is a precursor of a group 13 organometallic thin film applied to a thin film for transistor oxide semiconductors in semiconductors and displays. To this end, the method for producing the organometallic amine compound involves a single stage production process and is an efficient method to produce organometallic amine compounds with high purity and high yield. 본 발명은 반도체 및 디스플레이에서의 트랜지스터 산화물 반도체 박막 등에 응용되는 13족 유기금속 박막 전구체인 유기금속아민 화합물의 제조방법에 관한 것으로, 본 발명의 유기금속아민 화합물의 제조방법은 단일단계 제조 공정으로 고순도, 고수율로 유기금속아민 화합물을 제조할 수 있는 매우 효율적인 방법이다.