CLEANING METHOD FOR SEMICONDUCTOR DEVICE FABRICATION

Described is a method for cleaning a semiconductor substrate for fabricating an integrated circuit. The method comprises a step of cleaning a semiconductor substrate with a first mixture composed of either one of ozone, acid, or a base and a second mixture composed of either one of the ozone, acid,...

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Bibliographische Detailangaben
Hauptverfasser:	JANG SYUN MING, YEH MING HSI, WU SUNG HSUN, CHEN CHAO CHENG, CHOU BO WEI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Described is a method for cleaning a semiconductor substrate for fabricating an integrated circuit. The method comprises a step of cleaning a semiconductor substrate with a first mixture composed of either one of ozone, acid, or a base and a second mixture composed of either one of the ozone, acid, or base except one constituting the first mixture. The mixtures for cleaning may further comprise de-ionized water. In an embodiment, the mixture is sprayed onto a heated surface of the substrate. The acid may be HF and the base may be NH_4OH. 집적 회로 제조를 위한 반도체 기판과 같은 기판을 세정하는 방법이 설명되고, 방법은 오존과 산 및 염기 중 어느 하나로 된 제1 혼합물로 반도체 기판을 세정하는 것을 포함하고, 오존과 산 및 염기 중 다른 어느 하나로 된 제2 혼합물이 이어진다. 세정 혼합물들은 초순수를 더 포함할 수 있다. 실시형태에서, 혼합물은 가열된 기판 표면 상에 분사된다. 산은 HF 일 수 있고, 염기는 NHOH 일 수 있다.