Apparatus and Method for Deposition

A deposition apparatus and a deposition method are provided. The deposition apparatus includes a chamber, a first light source disposed in the chamber, a second light source, and a reflector disposed on the first light source and the second light source. The deposition method using the deposition ap...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KIM, DEOK JOONG, KOO, BONG JUN, KIM, YOUNG BEOM, KIM, HAK SUNG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A deposition apparatus and a deposition method are provided. The deposition apparatus includes a chamber, a first light source disposed in the chamber, a second light source, and a reflector disposed on the first light source and the second light source. The deposition method using the deposition apparatus includes a step of preparing a substrate in the chamber including the first light source for emitting first light and the second light source for emitting second light having a wavelength band different from the first light, and a step of supplying a source gas into the chamber and forming a material layer on the substrate. The first light or the second light selectively emitted to the substrate while the source gas is supplied into the chamber or after the material film is formed. 증착 장비 및 증착 방법이 제공된다. 상기 증착 장비는, 챔버, 상기 챔버 내에 배치되는 제1 광원, 제2 광원, 및 상기 제1 광원 및 상기 제2 광원 상에 배치되는 리플렉터를 포함한다. 상기 증착 장비를 이용한 상기 증착 방법은, 제1 광을 조사하는 상기 제1 광원, 및 상기 제1 광과 다른 파장 대역을 갖는 제2 광을 조사하는 상기 제2 광원을 포함하는 상기 챔버 내에 기판을 준비하는 단계, 및 상기 챔버 내에 소스 가스를 공급하여, 상기 기판상에 물질막(material layer)을 형성하는 단계를 포함하되, 상기 챔버 내에 상기 소스 가스가 공급되는 동안, 또는 상기 물질막이 형성된 후, 상기 기판으로 상기 제1 광 또는 상기 제2 광을 선택적으로 조사하는 것을 포함한다.