Memory system and method of wear-leveling in the memory system

Memory system and method of wear-leveling in the memory system

According to the present invention, a memory system includes a phase-change random-access memory (PCRAM) and a memory controller. The memory controller is configured to control the PCRAM in response to an input command, and in a case where a write counter is greater than a threshold when a write com...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HONG, DO SUN, KIM, DONG GUN, KIM, YONG JU, JINGZHE XU, JO, SANG GU, LEE, JAE SUN, KWON, JUNG HYUN, LEE, SUNG EUN
Format: Patent
Sprache:eng ; kor
Schlagworte:
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
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Beschreibung
Zusammenfassung:According to the present invention, a memory system includes a phase-change random-access memory (PCRAM) and a memory controller. The memory controller is configured to control the PCRAM in response to an input command, and in a case where a write counter is greater than a threshold when a write command with respect to a stack area is input, perform a swapping operation for replacing the stack area with another memory area. 메모리 시스템은, 상변화 랜덤 억세스 메모리(PCRAM) 및 메모리 컨트롤러를 포함한다. 메모리 컨트롤러는, 입력되는 명령에 따라 상기 상변화 랜덤 억세스 메모리(PCRAM)를 제어하되, 스택영역에 대한 쓰기 명령 입력시 쓰기 카운터가 임계값을 넘는 경우 상기 스택영역과 다른 메모리영역을 교체하는 스왑핑 동작을 수행한다.