SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
The present invention relates to a semiconductor element, which has the excellent quality of a light emitting structure, low manufacturing cost, and excellent light efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor element comprising the steps of: disposing...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The present invention relates to a semiconductor element, which has the excellent quality of a light emitting structure, low manufacturing cost, and excellent light efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor element comprising the steps of: disposing a metal pattern on a gallium nitride (GaN) substrate; developing a nitride-based light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the metal pattern; disposing a support substrate on the nitride-based light emitting structure; and removing the gallium nitride substrate and the metal pattern.
실시예는 갈륨 나이트라이드(GaN) 기판 상에, 금속 패턴을 배치하는 단계; 기 금속 패턴 상에, 제1 도전형 반도체층과 활성층 및 제2 도전형 반도체층을 포함하는 질화물계 발광 구조물을 성장시키는 단계; 상기 질화물계 발광 구조물 상에, 지지 기판을 배치하는 단계; 및 상기 갈륨 나이트라이드 기판과 상기 금속 패턴을 제거하는 단계를 포함하는 반도체 소자의 제조 방법을 제공한다. |
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