SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

A semiconductor device comprises: a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer; a first passivation pattern provided onto the semiconductor structure; and first and second conductive p...

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Bibliographische Detailangaben
Hauptverfasser:	KWACK, MYUNG JOON, JANG, HYUN GYU, NA, JE HO, JUN, CHI HOON, KO, SANG CHOON, LEE, HYUNG SEOK, PARK, YOUNG RAK, CHANG, WOO JIN, JUNG, DONG YUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device comprises: a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer; a first passivation pattern provided onto the semiconductor structure; and first and second conductive patterns provided onto the semiconductor structure and separated from the first passivation pattern. 반도체 소자는 기판, 기판 상의 제1 반도체층 및 제1 반도체층 상의 제2 반도체층을 포함하는 반도체 구조체, 반도체 구조체 상에 제공되는 제1 패시베이션 패턴, 및 반도체 구조체 상에 제공되고, 제1 패시베이션 패턴으로부터 이격되는 제1 및 제2 도전 패턴들을 포함한다.