METAL MATERIAL FOR USE IN ELECTRONIC COMPONENT AND METHOD FOR PRODUCING SAME
저삽입 발출성, 저위스커성 및 고내구성을 갖는 전자 부품용 금속 재료 및 그 제조 방법을 제공한다. 기재 (11) 와, 기재 (11) 의 최표층을 구성하고, Sn, In, 또는 그들의 합금으로 형성된 A 층 (14) 과, 기재 (11) 와 A 층 (14) 사이에 형성되어 중층을 구성하고, Ag, Au, Pt, Pd, Ru, Rh, Os, Ir, 또는 그들의 합금으로 형성된 B 층 (13) 을 구비하고, 최표층 (A 층) (14) 의 두께가 0.2 ㎛ 보다 두껍고, 중층 (B 층) (13) 의 두께가 0.001 ㎛ 이상인 전자 부품용...
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| creator | KODAMA ATSUSHI SHIBUYA YOSHITAKA FUKAMACHI KAZUHIKO |
| description | 저삽입 발출성, 저위스커성 및 고내구성을 갖는 전자 부품용 금속 재료 및 그 제조 방법을 제공한다. 기재 (11) 와, 기재 (11) 의 최표층을 구성하고, Sn, In, 또는 그들의 합금으로 형성된 A 층 (14) 과, 기재 (11) 와 A 층 (14) 사이에 형성되어 중층을 구성하고, Ag, Au, Pt, Pd, Ru, Rh, Os, Ir, 또는 그들의 합금으로 형성된 B 층 (13) 을 구비하고, 최표층 (A 층) (14) 의 두께가 0.2 ㎛ 보다 두껍고, 중층 (B 층) (13) 의 두께가 0.001 ㎛ 이상인 전자 부품용 금속 재료 (10).
There are provided an electronic component metal material having low insertability/extractability, low whisker formability and high durability, and a method for manufacturing the electronic component metal material. The electronic component metal material 10 includes a base material 11, an A layer 14 constituting an outermost surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the outermost surface layer (A layer) 14 has a thickness larger than 0.2 µm, and the middle layer (B layer) 13 has a thickness of 0.001 µm or larger. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20170071614A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20170071614A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20170071614A3</originalsourceid><addsrcrecordid>eNrjZPDxdQ1x9FHwdQxxDfIEMtz8gxRCg10VPP0UXH1cnUOC_P08nRWc_X0D_P1c_UIUHP1cFIBaPPxdwEoDgvxdQp09_dwVgh19XXkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBobmBgbmhmaGJozFxqgBJCi59</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METAL MATERIAL FOR USE IN ELECTRONIC COMPONENT AND METHOD FOR PRODUCING SAME</title><source>esp@cenet</source><creator>KODAMA ATSUSHI ; SHIBUYA YOSHITAKA ; FUKAMACHI KAZUHIKO</creator><creatorcontrib>KODAMA ATSUSHI ; SHIBUYA YOSHITAKA ; FUKAMACHI KAZUHIKO</creatorcontrib><description>저삽입 발출성, 저위스커성 및 고내구성을 갖는 전자 부품용 금속 재료 및 그 제조 방법을 제공한다. 기재 (11) 와, 기재 (11) 의 최표층을 구성하고, Sn, In, 또는 그들의 합금으로 형성된 A 층 (14) 과, 기재 (11) 와 A 층 (14) 사이에 형성되어 중층을 구성하고, Ag, Au, Pt, Pd, Ru, Rh, Os, Ir, 또는 그들의 합금으로 형성된 B 층 (13) 을 구비하고, 최표층 (A 층) (14) 의 두께가 0.2 ㎛ 보다 두껍고, 중층 (B 층) (13) 의 두께가 0.001 ㎛ 이상인 전자 부품용 금속 재료 (10).
There are provided an electronic component metal material having low insertability/extractability, low whisker formability and high durability, and a method for manufacturing the electronic component metal material. The electronic component metal material 10 includes a base material 11, an A layer 14 constituting an outermost surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the outermost surface layer (A layer) 14 has a thickness larger than 0.2 µm, and the middle layer (B layer) 13 has a thickness of 0.001 µm or larger.</description><language>eng ; kor</language><subject>ALLOYS ; APPARATUS THEREFOR ; CHEMISTRY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; FERROUS OR NON-FERROUS ALLOYS ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; METALLURGY ; PERFORMING OPERATIONS ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; TRANSPORTING ; TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170623&DB=EPODOC&CC=KR&NR=20170071614A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170623&DB=EPODOC&CC=KR&NR=20170071614A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KODAMA ATSUSHI</creatorcontrib><creatorcontrib>SHIBUYA YOSHITAKA</creatorcontrib><creatorcontrib>FUKAMACHI KAZUHIKO</creatorcontrib><title>METAL MATERIAL FOR USE IN ELECTRONIC COMPONENT AND METHOD FOR PRODUCING SAME</title><description>저삽입 발출성, 저위스커성 및 고내구성을 갖는 전자 부품용 금속 재료 및 그 제조 방법을 제공한다. 기재 (11) 와, 기재 (11) 의 최표층을 구성하고, Sn, In, 또는 그들의 합금으로 형성된 A 층 (14) 과, 기재 (11) 와 A 층 (14) 사이에 형성되어 중층을 구성하고, Ag, Au, Pt, Pd, Ru, Rh, Os, Ir, 또는 그들의 합금으로 형성된 B 층 (13) 을 구비하고, 최표층 (A 층) (14) 의 두께가 0.2 ㎛ 보다 두껍고, 중층 (B 층) (13) 의 두께가 0.001 ㎛ 이상인 전자 부품용 금속 재료 (10).
There are provided an electronic component metal material having low insertability/extractability, low whisker formability and high durability, and a method for manufacturing the electronic component metal material. The electronic component metal material 10 includes a base material 11, an A layer 14 constituting an outermost surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the outermost surface layer (A layer) 14 has a thickness larger than 0.2 µm, and the middle layer (B layer) 13 has a thickness of 0.001 µm or larger.</description><subject>ALLOYS</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>LAYERED PRODUCTS</subject><subject>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>TRANSPORTING</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDxdQ1x9FHwdQxxDfIEMtz8gxRCg10VPP0UXH1cnUOC_P08nRWc_X0D_P1c_UIUHP1cFIBaPPxdwEoDgvxdQp09_dwVgh19XXkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBobmBgbmhmaGJozFxqgBJCi59</recordid><startdate>20170623</startdate><enddate>20170623</enddate><creator>KODAMA ATSUSHI</creator><creator>SHIBUYA YOSHITAKA</creator><creator>FUKAMACHI KAZUHIKO</creator><scope>EVB</scope></search><sort><creationdate>20170623</creationdate><title>METAL MATERIAL FOR USE IN ELECTRONIC COMPONENT AND METHOD FOR PRODUCING SAME</title><author>KODAMA ATSUSHI ; SHIBUYA YOSHITAKA ; FUKAMACHI KAZUHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20170071614A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2017</creationdate><topic>ALLOYS</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>LAYERED PRODUCTS</topic><topic>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>TRANSPORTING</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><toplevel>online_resources</toplevel><creatorcontrib>KODAMA ATSUSHI</creatorcontrib><creatorcontrib>SHIBUYA YOSHITAKA</creatorcontrib><creatorcontrib>FUKAMACHI KAZUHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KODAMA ATSUSHI</au><au>SHIBUYA YOSHITAKA</au><au>FUKAMACHI KAZUHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METAL MATERIAL FOR USE IN ELECTRONIC COMPONENT AND METHOD FOR PRODUCING SAME</title><date>2017-06-23</date><risdate>2017</risdate><abstract>저삽입 발출성, 저위스커성 및 고내구성을 갖는 전자 부품용 금속 재료 및 그 제조 방법을 제공한다. 기재 (11) 와, 기재 (11) 의 최표층을 구성하고, Sn, In, 또는 그들의 합금으로 형성된 A 층 (14) 과, 기재 (11) 와 A 층 (14) 사이에 형성되어 중층을 구성하고, Ag, Au, Pt, Pd, Ru, Rh, Os, Ir, 또는 그들의 합금으로 형성된 B 층 (13) 을 구비하고, 최표층 (A 층) (14) 의 두께가 0.2 ㎛ 보다 두껍고, 중층 (B 층) (13) 의 두께가 0.001 ㎛ 이상인 전자 부품용 금속 재료 (10).
There are provided an electronic component metal material having low insertability/extractability, low whisker formability and high durability, and a method for manufacturing the electronic component metal material. The electronic component metal material 10 includes a base material 11, an A layer 14 constituting an outermost surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the outermost surface layer (A layer) 14 has a thickness larger than 0.2 µm, and the middle layer (B layer) 13 has a thickness of 0.001 µm or larger.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ALLOYS APPARATUS THEREFOR CHEMISTRY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FERROUS OR NON-FERROUS ALLOYS LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY PERFORMING OPERATIONS PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS |
| title | METAL MATERIAL FOR USE IN ELECTRONIC COMPONENT AND METHOD FOR PRODUCING SAME |
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