Ellipsometer and method of inspecting pattern asymmetry using the same

본 발명은 미리 설정된 특정 각도에 해당하는 회전 간격에 따라서 미리 설정된 회전구간 내에서 회전이 가능한 스테이지를 구비한 분광 타원계측기를 제공함으로써 반도체 소자의 패턴들의 비대칭성의 정도 및 방향을 측정할 수 있는 장치 및 그러한 측정 방법을 제공한다. An ellipsometer includes a stage, a light source, a polarizer, a detector, and a processor. The stage is configured to support a substrate including a pattern. The light source is configured to emit illumination toward the substrate. The polarizer is configured to polarize the illumination. The detector is configured to generate, in association with a plurality of azimuthal angles, data corresponding to polarized illumination reflected from the substrate. The processor is configured to: control rotation of the stage in association with sequential inspection of the pattern at the plurality of azimuthal angles, and determine asymmetry of the pattern based on the data. Each azimuthal angle of the plurality of azimuthal angles corresponds to a different rotational state of the stage.