METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE

Provided is a method for forming a semiconductor device structure, comprising the following steps: forming a film on a substrate; forming a first mask layer on the film; forming a second mask layer, which exposes a first part of the first mask layer, on the first mask layer; performing plasma etchin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIAO KENG YING, CHEN PO ZEN, TSENG CHUNG BIN, CHEN YI HUNG, CHEN YI JIE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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