Magneto-resistance random access memory device and method of fabricating the same
The present invention relates to a fabricating method of a magnetic resistance memory device, comprising: forming a magnetic tunnel junction layer on a substrate; forming the magnetic tunnel junction layer by patterning the magnetic tunnel junction pattern; removing an etching residue formed on the...
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| Hauptverfasser: | , , , , , , , |
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The present invention relates to a fabricating method of a magnetic resistance memory device, comprising: forming a magnetic tunnel junction layer on a substrate; forming the magnetic tunnel junction layer by patterning the magnetic tunnel junction pattern; removing an etching residue formed on the side of the magnetic tunnel junction pattern by performing a cleaning process; and removing an oxide layer formed on the side of the magnetic tunnel junction pattern by performing a sputter etching process. The present invention can prevent electric disconnection of the magnetic tunnel junction pattern.
기판 상에 자기 터널 접합 층을 형성하고, 상기 자기 터널 접합 층을 패터닝하여 자기 터널 접합 패턴을 형성하고, 상기 자기 터널 접합 패턴의 측면 상에는 식각 잔류물이 형성되고, 세정 공정을 수행하여 상기 식각 잔류물을 제거하고, 상기 자기 터널 접합 패턴의 측면 상에 산화막이 형성되고, 및 스퍼터 에칭 공정을 수행하여 상기 산화막을 제거하는 것을 포함하는 자기 저항 메모리 소자의 제조 방법이 설명된다. |
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