LIGHT EMITTING DIODE USING RECOMBINATION OF DEEP LEVEL ELECTRON AND METHOD OF FABRICATING THE SAME
The present invention provides a light emitting diode (LED) using recombination of a deep level electron and a manufacturing method thereof. According to one embodiment of the present invention, the LED comprises: an n-type contact layer; a p-type contact layer; a first active region interposed betw...
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| creator | KIM, HWA MOK JANG, CHANG GEUN CHOI, HYO SHIK HAN, CHANG SEOK HEO, JEONG HUN |
| description | The present invention provides a light emitting diode (LED) using recombination of a deep level electron and a manufacturing method thereof. According to one embodiment of the present invention, the LED comprises: an n-type contact layer; a p-type contact layer; a first active region interposed between the n-type and p-type contact layers to generate light of an ultraviolet range; a second active region interposed between the first active region and the p-type contact layer to generate light of a blue range; and at least one gallium nitride-based light absorption-emission layer disposed on the n-type contract layer by facing the first active region, and absorbing a part of the light emitted from the first active region to emit light of a yellow range. According to the present invention, an LED using the light absorption-emission layer to realize white light without a fluorescent body can be provided.
깊은 레벨 전자의 재결합을 이용하는 발광 다이오드 및 그것을 제조하는 방법이 제공된다. 일 실시예에 따른 발광 다이오드는, n형 콘택층; p형 콘택층; 상기 n형 콘택층과 상기 p형 콘택층 사이에 개재되어 자외선 영역의 광을 생성하는 제1 활성영역; 상기 제1 활성영역과 상기 p형 콘택층 사이에 개재되어 청색 영역의 광을 생성하는 제2 활성영역; 및 상기 제1 활성영역에 대향하여 상기 n형 콘택층 측에 위치하고, 상기 제1 활성영역에서 방출된 광의 일부를 흡수하여 황색 영역의 광을 방출하는 적어도 하나의 질화갈륨계 광 흡수-방출층을 포함한다. 광 흡수-방출층을 이용함으로써 형광체 없이 백색광을 구현할 수 있는 발광 다이오드를 제공할 수 있다. |
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깊은 레벨 전자의 재결합을 이용하는 발광 다이오드 및 그것을 제조하는 방법이 제공된다. 일 실시예에 따른 발광 다이오드는, n형 콘택층; p형 콘택층; 상기 n형 콘택층과 상기 p형 콘택층 사이에 개재되어 자외선 영역의 광을 생성하는 제1 활성영역; 상기 제1 활성영역과 상기 p형 콘택층 사이에 개재되어 청색 영역의 광을 생성하는 제2 활성영역; 및 상기 제1 활성영역에 대향하여 상기 n형 콘택층 측에 위치하고, 상기 제1 활성영역에서 방출된 광의 일부를 흡수하여 황색 영역의 광을 방출하는 적어도 하나의 질화갈륨계 광 흡수-방출층을 포함한다. 광 흡수-방출층을 이용함으로써 형광체 없이 백색광을 구현할 수 있는 발광 다이오드를 제공할 수 있다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170313&DB=EPODOC&CC=KR&NR=20170028200A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170313&DB=EPODOC&CC=KR&NR=20170028200A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM, HWA MOK</creatorcontrib><creatorcontrib>JANG, CHANG GEUN</creatorcontrib><creatorcontrib>CHOI, HYO SHIK</creatorcontrib><creatorcontrib>HAN, CHANG SEOK</creatorcontrib><creatorcontrib>HEO, JEONG HUN</creatorcontrib><title>LIGHT EMITTING DIODE USING RECOMBINATION OF DEEP LEVEL ELECTRON AND METHOD OF FABRICATING THE SAME</title><description>The present invention provides a light emitting diode (LED) using recombination of a deep level electron and a manufacturing method thereof. According to one embodiment of the present invention, the LED comprises: an n-type contact layer; a p-type contact layer; a first active region interposed between the n-type and p-type contact layers to generate light of an ultraviolet range; a second active region interposed between the first active region and the p-type contact layer to generate light of a blue range; and at least one gallium nitride-based light absorption-emission layer disposed on the n-type contract layer by facing the first active region, and absorbing a part of the light emitted from the first active region to emit light of a yellow range. According to the present invention, an LED using the light absorption-emission layer to realize white light without a fluorescent body can be provided.
깊은 레벨 전자의 재결합을 이용하는 발광 다이오드 및 그것을 제조하는 방법이 제공된다. 일 실시예에 따른 발광 다이오드는, n형 콘택층; p형 콘택층; 상기 n형 콘택층과 상기 p형 콘택층 사이에 개재되어 자외선 영역의 광을 생성하는 제1 활성영역; 상기 제1 활성영역과 상기 p형 콘택층 사이에 개재되어 청색 영역의 광을 생성하는 제2 활성영역; 및 상기 제1 활성영역에 대향하여 상기 n형 콘택층 측에 위치하고, 상기 제1 활성영역에서 방출된 광의 일부를 흡수하여 황색 영역의 광을 방출하는 적어도 하나의 질화갈륨계 광 흡수-방출층을 포함한다. 광 흡수-방출층을 이용함으로써 형광체 없이 백색광을 구현할 수 있는 발광 다이오드를 제공할 수 있다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjL0KwjAURrs4iPoOF5yFWAdd0-SmuZgfSW9dS5U4iRbq-6MVH8DpOxwO37y4OKotA3piplCDpqgR2mbihCr6ioJkigGiAY14AodndIAOFaePlkGDR7ZRT4WRVSIlv1dsERrpcVnMbv19zKvfLoq1QVZ2k4dnl8ehv-ZHfnXHVIrtXojyUAohd_9Vb3AWNDA</recordid><startdate>20170313</startdate><enddate>20170313</enddate><creator>KIM, HWA MOK</creator><creator>JANG, CHANG GEUN</creator><creator>CHOI, HYO SHIK</creator><creator>HAN, CHANG SEOK</creator><creator>HEO, JEONG HUN</creator><scope>EVB</scope></search><sort><creationdate>20170313</creationdate><title>LIGHT EMITTING DIODE USING RECOMBINATION OF DEEP LEVEL ELECTRON AND METHOD OF FABRICATING THE SAME</title><author>KIM, HWA MOK ; JANG, CHANG GEUN ; CHOI, HYO SHIK ; HAN, CHANG SEOK ; HEO, JEONG HUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20170028200A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM, HWA MOK</creatorcontrib><creatorcontrib>JANG, CHANG GEUN</creatorcontrib><creatorcontrib>CHOI, HYO SHIK</creatorcontrib><creatorcontrib>HAN, CHANG SEOK</creatorcontrib><creatorcontrib>HEO, JEONG HUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM, HWA MOK</au><au>JANG, CHANG GEUN</au><au>CHOI, HYO SHIK</au><au>HAN, CHANG SEOK</au><au>HEO, JEONG HUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LIGHT EMITTING DIODE USING RECOMBINATION OF DEEP LEVEL ELECTRON AND METHOD OF FABRICATING THE SAME</title><date>2017-03-13</date><risdate>2017</risdate><abstract>The present invention provides a light emitting diode (LED) using recombination of a deep level electron and a manufacturing method thereof. According to one embodiment of the present invention, the LED comprises: an n-type contact layer; a p-type contact layer; a first active region interposed between the n-type and p-type contact layers to generate light of an ultraviolet range; a second active region interposed between the first active region and the p-type contact layer to generate light of a blue range; and at least one gallium nitride-based light absorption-emission layer disposed on the n-type contract layer by facing the first active region, and absorbing a part of the light emitted from the first active region to emit light of a yellow range. According to the present invention, an LED using the light absorption-emission layer to realize white light without a fluorescent body can be provided.
깊은 레벨 전자의 재결합을 이용하는 발광 다이오드 및 그것을 제조하는 방법이 제공된다. 일 실시예에 따른 발광 다이오드는, n형 콘택층; p형 콘택층; 상기 n형 콘택층과 상기 p형 콘택층 사이에 개재되어 자외선 영역의 광을 생성하는 제1 활성영역; 상기 제1 활성영역과 상기 p형 콘택층 사이에 개재되어 청색 영역의 광을 생성하는 제2 활성영역; 및 상기 제1 활성영역에 대향하여 상기 n형 콘택층 측에 위치하고, 상기 제1 활성영역에서 방출된 광의 일부를 흡수하여 황색 영역의 광을 방출하는 적어도 하나의 질화갈륨계 광 흡수-방출층을 포함한다. 광 흡수-방출층을 이용함으로써 형광체 없이 백색광을 구현할 수 있는 발광 다이오드를 제공할 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | LIGHT EMITTING DIODE USING RECOMBINATION OF DEEP LEVEL ELECTRON AND METHOD OF FABRICATING THE SAME |
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