Deposition method capable of controlling process temperature

The present invention relates to a deposition method and, more specifically, to a deposition method which facilitates temperature control of a deposition process to obtain an advantage in low temperature deposition, which increases cooling efficiency of a sample, a deposition target, to enable depos...

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Bibliographische Detailangaben
Hauptverfasser:	JUNG, SUNG HUN, AN, KYOUNG JOON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a deposition method and, more specifically, to a deposition method which facilitates temperature control of a deposition process to obtain an advantage in low temperature deposition, which increases cooling efficiency of a sample, a deposition target, to enable deposition of high quality, and which can uniformly deposit a side surface and an edge portion of the sample. 본 발명은 증착 방법에 관한 것으로, 보다 구체적으로는 증착 공정의 온도 조절이 용이하여 저온 증착에 유리하며, 증착 대상인 샘플의 냉각효율을 증대시켜 고품질의 증착이 가능하며, 샘플의 측면과 모서리부분을 균일하게 증착할 수 있는 증착 방법에 관한 것이다.