PATTERN STRUCTURE

PATTERN STRUCTURE

The present invention relates to a pattern structure (100) which comprises: a substrate (10); and a pattern layer (14) formed by an atom layer deposition method on the surface (10S) of the substrate (10). The pattern layer (14) includes a stepped unit (14A) protruded to a direction A intersecting wi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ITOU HIROYUKI, OKAMOTO KIMIYASU, TAKIGAWA SEIICHI, ICHIKAWA SHUJI
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present invention relates to a pattern structure (100) which comprises: a substrate (10); and a pattern layer (14) formed by an atom layer deposition method on the surface (10S) of the substrate (10). The pattern layer (14) includes a stepped unit (14A) protruded to a direction A intersecting with a normal direction of the surface (10S) of the substrate (10) as well as inclining on the surface (10S) of the substrate (10). 패턴 구조체(100)는, 기재(10)와, 기재(10)의 표면(10S) 상에, 원자층 퇴적법에 의해 형성된 패턴막(14)을 구비한다. 패턴막(14)은, 기재(10)의 표면(10S)에 대해서 경사짐과 아울러 기재(10)의 표면(10S)의 법선 방향에 교차하는 방향 A로 돌출하는 단부(14A)를 구비한다.