Semiconductor device and method for fabricating the same
A semiconductor device is provided. The semiconductor device includes a laminate structure which includes insulation patterns and electrode structures which are alternately laminated on a substrate, and a vertical channel structure which vertically passes through the laminate structure. Each of the...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | A semiconductor device is provided. The semiconductor device includes a laminate structure which includes insulation patterns and electrode structures which are alternately laminated on a substrate, and a vertical channel structure which vertically passes through the laminate structure. Each of the electrode structures includes a conductive pattern which includes a first sidewall and a second sidewall facing the first sidewall, a first etch prevention pattern which is formed on the first sidewall, and a second etch prevention pattern which is formed on the second sidewall. Accordingly, the reliability of the semiconductor device can be improved.
반도체 장치가 제공된다. 반도체 장치는 기판 상에 교대로 적층된 절연 패턴들 및 전극 구조체들을 포함하는 적층 구조체, 및 상기 적층 구조체를 수직적으로 관통하는 수직 채널 구조체를 포함한다. 상기 전극 구조체들의 각각은 제1 측벽 및 상기 제1 측벽에 대향하는 제2 측벽을 가지는 도전 패턴, 상기 제1 측벽 상의 제1 식각 방지 패턴, 및 상기 제2 측벽 상의 제2 식각 방지 패턴을 포함한다. |
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