SENSOR OF CNT-METAL HYBRID STRUCTURE AND MANUFACTURING METHOD THEREOF

The present invention relates to a sensor comprising a fused structure of a carbon nanotube and a metal, and relates to a manufacturing method thereof. According to an embodiment of the present invention, the sensor comprises: a substrate including silicon (Si), silicon oxide (SiO_2), or polydimethy...

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Bibliographische Detailangaben
Hauptverfasser:	HONG, SEUNG HUN, SHIN,RAE, CHO, YOUNG TAK, PARK, CHEOL HWAN, YOO, HA NEUL
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR MEASURING QUANTITY OF HEAT MEASURING TEMPERATURE PHYSICS SEMICONDUCTOR DEVICES TARIFF METERING APPARATUS TESTING THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	The present invention relates to a sensor comprising a fused structure of a carbon nanotube and a metal, and relates to a manufacturing method thereof. According to an embodiment of the present invention, the sensor comprises: a substrate including silicon (Si), silicon oxide (SiO_2), or polydimethylsiloxane (PDMS); a carbon nanotube layer including a plurality of semiconductive single-wall carbon nanotubes, formed to be in contact with a partial region on the top of the substrate; and a metal layer in contact with the plurality of semiconductive single-wall carbon nanotubes, formed on the top of the carbon nanotube layer. 본 발명은 탄소나노튜브와 금속의 융합 구조를 포함하는 센서 및 이의 제조방법에 관한 것이며, 본 발명의 일 실시예에 따른 센서는 실리콘(Si), 실리콘 산화물(SiO2), 또는 PDMS(polydimethylsiloxane)를 포함하는 기판, 기판 위의 일부 영역에 접촉되도록 형성되어 있으며, 복수개의 반도체성 단일벽 탄소 나노튜브를 포함하는 탄소나노튜브층, 그리고 탄소나노튜브층 위에 형성되어 있으며, 복수개의 반도체성 단일벽 탄소 나노튜브와 접촉하는 금속층을 포함한다.