SEMICONDUCTOR RADIATION DETECTING DEVICE

One embodiment of the present invention provides a semiconductor radiation detecting device, comprising: a radiation-sensitized semiconductor where a charge is generated by incident of a radiation ray; a first electrode disposed in a first area of the semiconductor to apply a voltage to the semicond...

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Bibliographische Detailangaben
Hauptverfasser:	HA, JANG HO, YEO, SUN MOG, KIM, HAN SOO, JEONG, MAN HEE, KIM, YOUNG SOO, OH, JOON HO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT THEREOF MEASUREMENT OF NUCLEAR OR X-RADIATION MEASURING NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	One embodiment of the present invention provides a semiconductor radiation detecting device, comprising: a radiation-sensitized semiconductor where a charge is generated by incident of a radiation ray; a first electrode disposed in a first area of the semiconductor to apply a voltage to the semiconductor; a second electrode disposed in a second area of the semiconductor to collect the generated charged; and a plurality of nanostructures arranged on at least one surface of the first and second areas. 본 발명의 일 실시예는, 방사선 입사에 의해 전하가 생성되는 방사선 감응형 반도체와, 상기 반도체의 제1 영역에 배치되어 상기 반도체에 전압을 인가하는 제1 전극과, 상기 반도체의 제2 영역에 배치되어 상기 생성된 전하를 수집하는 제2 전극과, 상기 제1 및 제2 영역 중 적어도 하나의 표면에 배열된 다수의 나노 구조체를 포함하는 반도체 방사선 검출소자를 제공한다.