SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
The present invention relates to a semiconductor structure and a method of fabricating the same. The method of fabricating the semiconductor structure according to an embodiment of the present invention, which is a method of forming a bulging structure on a substrate by metal-assisted chemical etchi...
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Zusammenfassung: | The present invention relates to a semiconductor structure and a method of fabricating the same. The method of fabricating the semiconductor structure according to an embodiment of the present invention, which is a method of forming a bulging structure on a substrate by metal-assisted chemical etching, includes: forming a metal catalyst layer with a predetermined thickness, having a reverse pattern of the bulging structure on the substrate; etching the etching area where the metal catalyst layer by having a reaction of a first etching solution to the metal catalyst layer such that the bulging structure is formed on the substrate; and removing whiskers formed on the substrate by having a reaction of a second etching solution to the substrate. The bulging structure may include a fin structure or a nanowire structure.
본 발명은 반도체 구조 및 이의 제조 방법에 관한 것으로, 본 발명의 실시 예에 따른 반도체 구조 제조 방법은 금속 촉매 화학 식각(metal-assisted chemical etching)에 의해 기판상에 돌출 구조를 형성하는 방법으로서, 기판상에 돌출 구조의 역패턴을 갖는 금속 촉매층을 소정의 두께로 형성하는 단계; 금속 촉매층에 제1 식각 용액을 반응시켜 금속 촉매층이 형성된 식각 영역을 식각함으로써 기판상에 돌출 구조를 형성하는 단계; 및 기판상에 제2 식각 용액을 반응시켜 기판상에 형성된 위스커(whisker)를 제거하는 단계를 포함한다. 돌출 구조는 핀(fin) 구조 또는 나노와이어(nanowire) 구조를 포함할 수 있다. |
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