ELECTRONIC DEVICE

An electronic device is provided. According to an embodiment of the present invention, the electronic device comprises a semiconductor memory. The semiconductor memory comprises a variable resistance element. The variable resistance element can include: a variable resistance pattern in which a first...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM, GUK CHEON, NOH, SEUNG MO, YOON, SUNG JOON, KIM, CHI HO
Format: Patent
Sprache:eng ; kor
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Beschreibung
Zusammenfassung:An electronic device is provided. According to an embodiment of the present invention, the electronic device comprises a semiconductor memory. The semiconductor memory comprises a variable resistance element. The variable resistance element can include: a variable resistance pattern in which a first electrode layer, a variable resistance layer, and a second electrode layer are sequentially laminated; and a switching assist separated from a sidewall of the variable resistance pattern to surround the variable resistance pattern wherein the switching assist includes vertically separated multi-layered conductive structures. 전자장치가 제공된다. 본 발명의 실시예에 따른 전자장치는 반도체 메모리를 포함하는 전자장치로서, 상기 반도체 메모리는 가변저항소자를 포함하고, 상기 가변저항소자는, 제1전극층, 가변저항층 및 제2전극층이 순차적으로 적층된 가변저항패턴; 및 상기 가변저항패턴 측벽으로부터 이격되어 상기 가변저항패턴을 둘러싸고 상하로 이격된 다층의 도전구조물을 포함하는 스위칭 어시스트를 포함할 수 있다.