ADDITIVE FOR RESIST AND RESIST COMPOSITION COMPRISING SAME

The present invention relates to an additive for a resist, represented by chemical formula 1-1, and a resist composition comprising the additive. The additive according to the present invention increases the hydrophobicity of a resist film surface during an exposure process and inhibits leaching cau...

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Bibliographische Detailangaben
Hauptverfasser:	SEO, DONG CHUL, HAN, JUN HEE, LIM, HYUN SOON, SHIN, JIN BONG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	The present invention relates to an additive for a resist, represented by chemical formula 1-1, and a resist composition comprising the additive. The additive according to the present invention increases the hydrophobicity of a resist film surface during an exposure process and inhibits leaching caused by water in immersion lithography, when it is applied to a resist composition. In addition, when applying the additive to a resist composition, it is possible to form a fine resist pattern having excellent sensitivity and resolution. In chemical formula 1-1, each substituent is the same as defined in the specification. 본 발명은 하기 화학식 1-1로 표시되는 레지스트용 첨가제 및 상기 첨가제를 포함하는 레지스트 조성물에 관한 것으로, 본 발명에 따른 첨가제는 레지스트 조성물에 적용시 노광 공정에서는 레지스트막 표면의 소수성을 높여 이머젼 리소그래피시 물에 의한 리칭을 억제하고, 레지스트 조성물에 적용시 우수한 감도 및 해상도를 갖는 미세 레지스트 패턴을 형성할 수 있다. [화학식 1-1]상기 식에서 각 치환기는 명세서 중에서 정의된 바와 같다.