MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

Disclosed is a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the steps of: forming a semiconductor layer on a buffer layer; etching some areas of the semiconductor layer and the buffer layer so as to have a preset structure; forming, on...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, JUNG HEE, WON, CHUL HO, SON, DONG HYEOK, JO, YOUNG WOO, LEE, JUN HYEOK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Disclosed is a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the steps of: forming a semiconductor layer on a buffer layer; etching some areas of the semiconductor layer and the buffer layer so as to have a preset structure; forming, on the buffer layer, an oxide film having a preset height lower than the height of the preset structure; forming a gate insulating film on the oxide film and the preset structure; and forming a gate electrode on the gate insulating film. 반도체 소자의 제조방법이 개시된다. 본 제조방법은, 버퍼층상에 반도체층을 형성하는 단계, 기 설정된 구조를 갖도록 반도체층 및 버퍼층의 일부 영역을 식각하는 단계, 식각된 버퍼층상에 기 설정된 구조의 높이보다 낮은 기 설정된 높이를 갖는 산화막을 형성하는 단계, 산화막 및 기 설정된 구조상에 게이트 절연막을 형성하는 단계 및 게이트 절연막 상에 게이트 전극을 형성하는 단계를 포함한다.