MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS

The present invention relates to a microwave plasma source, which can increase plasma uniformity in a circumferential direction even when the number of microwave radiating units is reduced. A microwave plasma source (2) has a microwave output unit (30), a microwave transmitting unit (40), and a micr...

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Bibliographische Detailangaben
Hauptverfasser: TANIHARA AKIRA, KASAI SHIGERU, YAMAMOTO NOBUHIKO, IKEDA TARO
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:The present invention relates to a microwave plasma source, which can increase plasma uniformity in a circumferential direction even when the number of microwave radiating units is reduced. A microwave plasma source (2) has a microwave output unit (30), a microwave transmitting unit (40), and a microwave radiating member (50). The microwave transmitting unit (40) has a plurality of microwave introducing mechanisms (43a) installed in a circumferential direction on a peripheral portion of the microwave radiating member (50). The microwave radiating member (50) has a plurality of slow wave members (121) installed along a region in which the microwave introducing mechanisms (43a) having an annular shape are disposed, a plurality of microwave transmitting members (122) having a corresponding annular shape, and slot antenna units (124) having a plurality of slots (123) disposed in a circumferential shape installed between the microwave transmitting members (122). The slow wave members (121) are disposed while being separated from each other by metal members (125), are provided twice as many as the number of the microwave introducing mechanisms, and are disposed to extend to both sides from locations corresponding to the microwave introducing mechanisms (43a). The slow wave members 121 are disposed while being separated from metal members (125), are provided twice as many as the microwave introducing mechanisms, and are disposed to extend to both sides from locations corresponding to locations of the microwave introducing mechanisms (43a). 본 발명은 마이크로파 방사부의 수를 적게 해도 둘레 방향의 플라즈마 균일성을 높일 수 있는 마이크로파 플라즈마원을 제공한다. 마이크로파 플라즈마원(2)은, 마이크로파 출력부(30)와, 마이크로파 전송부(40)와, 마이크로파 방사 부재(50)를 갖는다. 마이크로파 전송부(40)는, 마이크로파 방사 부재(50)의 주연부 상에 원주 방향을 따라 복수 설치된 마이크로파 도입 기구(43a)를 갖고, 마이크로파 방사 부재(50)는 원환 형상을 이루는 마이크로파 도입 기구 배치 영역을 따라서 복수 설치된 지파재(121)와, 대응하는 원환 형상의 마이크로파 투과 부재(122)와, 이들 사이에 설치된 원주 형상으로 배치된 복수의 슬롯(123)을 갖는 슬롯 안테나부(124)를 갖는다. 복수의 지파재(121)는, 인접하는 것이 금속 부재(125)에 의해 분리된 상태로 배치되고, 마이크로파 도입 기구의 수의 2배의 매수이며, 각 마이크로파 도입 기구(43a)에 대응하는 위치로부터, 양측으로 연장하도록 배치되어 있다.