MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

The present invention provides a semiconductor device for reducing manufacturing costs and having high reliability. The method for manufacturing the semiconductor device performs dry etching on an insulation film by using mixed gas consisting of at least CF_4 and C_3H_2F_4 gas. 제조 비용을 억제하면서, 신뢰성이 높은...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	HORIKOSHI KOTARO, AKAISHI MASATOSHI, KIKUCHI YUJI, HANAWA TOSHIKAZU
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention provides a semiconductor device for reducing manufacturing costs and having high reliability. The method for manufacturing the semiconductor device performs dry etching on an insulation film by using mixed gas consisting of at least CF_4 and C_3H_2F_4 gas. 제조 비용을 억제하면서, 신뢰성이 높은 반도체 장치를 제공한다. 적어도 CF가스와 CHF가스를 그 성분으로 포함하는 혼합 가스를 사용하여 절연막의 건식 에칭을 행한다