ATOMIC LAYER DEPOSITION OF FILMS USING SPATIALLY SEPARATED INJECTOR CHAMBER

ATOMIC LAYER DEPOSITION OF FILMS USING SPATIALLY SEPARATED INJECTOR CHAMBER

Methods for depositing a layer include a step of locating a plurality of substrates on a substrate support part in a processing chamber having a plurality of processing regions. Each of the processing regions is separated from an adjacent region by a gas curtain. To deposit a layer, exposure to firs...

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Bibliographische Detailangaben
Hauptverfasser: SATO TATSUYA E, NEWMAN ERAN
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods for depositing a layer include a step of locating a plurality of substrates on a substrate support part in a processing chamber having a plurality of processing regions. Each of the processing regions is separated from an adjacent region by a gas curtain. To deposit a layer, exposure to first reactive gases, purge gases, second reactive gases, and a purge gas in at least one among the processing regions is alternately carried out. So, the deposition time can be reduced. 막을 증착하는 방법들은, 복수의 프로세싱 구역들을 갖는 프로세싱 챔버에서 기판 지지부 상에 복수의 기판들을 위치시키는 단계를 포함하고, 각각의 프로세싱 구역은, 가스 커튼에 의해, 인접한 구역으로부터 분리된다. 막을 증착하기 위해, 프로세싱 구역들 중 적어도 하나에서의 제 1 반응성 가스들, 퍼지 가스들, 제 2 반응성 가스들, 및 퍼지 가스에 대한 노출을 교번시킨다.