ANISOTROPIC CONDUCTIVE FILM AND THE SEMICONDUCTOR DEVICE USING THEREOF
본 발명은 전극간의 전극부에 압착되는 도전 입자 밀도 및 스페이스부의 도전 입자 밀도를 조절하여 쇼트를 방지할 수 있고, 원가 절감 효과 및 접속 특성이 향상된 이방성 도전 필름 및 이에 의해 접속된 반도체 장치에 관한 것이다. The present invention relates to an anisotropic conductive film that can prevent a short circuit by adjusting density of conductive particles pressed to electrode parts bet...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng ; kor |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | PARK KYOUNG SOO JUNG KWANG JIN KIM JI YEON HWANG JA YOUNG |
description | 본 발명은 전극간의 전극부에 압착되는 도전 입자 밀도 및 스페이스부의 도전 입자 밀도를 조절하여 쇼트를 방지할 수 있고, 원가 절감 효과 및 접속 특성이 향상된 이방성 도전 필름 및 이에 의해 접속된 반도체 장치에 관한 것이다.
The present invention relates to an anisotropic conductive film that can prevent a short circuit by adjusting density of conductive particles pressed to electrode parts between electrodes and density of conductive particles in a space between the electrodes and exhibit enhanced cost-reduction effects and connection characteristics, and a semiconductor device connected thereby. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20160077039A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20160077039A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20160077039A3</originalsourceid><addsrcrecordid>eNrjZHBz9PMM9g8J8g_wdFZw9vdzCXUO8QxzVXDz9PFVcPRzUQjxcFUIdvX1hMr5Bym4uIZ5OrsqhAZ7-rmDpINc_d14GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakm8d5CRgaGZgYG5uYGxpaMxcaoAcZYtTA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ANISOTROPIC CONDUCTIVE FILM AND THE SEMICONDUCTOR DEVICE USING THEREOF</title><source>esp@cenet</source><creator>PARK KYOUNG SOO ; JUNG KWANG JIN ; KIM JI YEON ; HWANG JA YOUNG</creator><creatorcontrib>PARK KYOUNG SOO ; JUNG KWANG JIN ; KIM JI YEON ; HWANG JA YOUNG</creatorcontrib><description>본 발명은 전극간의 전극부에 압착되는 도전 입자 밀도 및 스페이스부의 도전 입자 밀도를 조절하여 쇼트를 방지할 수 있고, 원가 절감 효과 및 접속 특성이 향상된 이방성 도전 필름 및 이에 의해 접속된 반도체 장치에 관한 것이다.
The present invention relates to an anisotropic conductive film that can prevent a short circuit by adjusting density of conductive particles pressed to electrode parts between electrodes and density of conductive particles in a space between the electrodes and exhibit enhanced cost-reduction effects and connection characteristics, and a semiconductor device connected thereby.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160701&DB=EPODOC&CC=KR&NR=20160077039A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160701&DB=EPODOC&CC=KR&NR=20160077039A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PARK KYOUNG SOO</creatorcontrib><creatorcontrib>JUNG KWANG JIN</creatorcontrib><creatorcontrib>KIM JI YEON</creatorcontrib><creatorcontrib>HWANG JA YOUNG</creatorcontrib><title>ANISOTROPIC CONDUCTIVE FILM AND THE SEMICONDUCTOR DEVICE USING THEREOF</title><description>본 발명은 전극간의 전극부에 압착되는 도전 입자 밀도 및 스페이스부의 도전 입자 밀도를 조절하여 쇼트를 방지할 수 있고, 원가 절감 효과 및 접속 특성이 향상된 이방성 도전 필름 및 이에 의해 접속된 반도체 장치에 관한 것이다.
The present invention relates to an anisotropic conductive film that can prevent a short circuit by adjusting density of conductive particles pressed to electrode parts between electrodes and density of conductive particles in a space between the electrodes and exhibit enhanced cost-reduction effects and connection characteristics, and a semiconductor device connected thereby.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBz9PMM9g8J8g_wdFZw9vdzCXUO8QxzVXDz9PFVcPRzUQjxcFUIdvX1hMr5Bym4uIZ5OrsqhAZ7-rmDpINc_d14GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakm8d5CRgaGZgYG5uYGxpaMxcaoAcZYtTA</recordid><startdate>20160701</startdate><enddate>20160701</enddate><creator>PARK KYOUNG SOO</creator><creator>JUNG KWANG JIN</creator><creator>KIM JI YEON</creator><creator>HWANG JA YOUNG</creator><scope>EVB</scope></search><sort><creationdate>20160701</creationdate><title>ANISOTROPIC CONDUCTIVE FILM AND THE SEMICONDUCTOR DEVICE USING THEREOF</title><author>PARK KYOUNG SOO ; JUNG KWANG JIN ; KIM JI YEON ; HWANG JA YOUNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20160077039A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>PARK KYOUNG SOO</creatorcontrib><creatorcontrib>JUNG KWANG JIN</creatorcontrib><creatorcontrib>KIM JI YEON</creatorcontrib><creatorcontrib>HWANG JA YOUNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PARK KYOUNG SOO</au><au>JUNG KWANG JIN</au><au>KIM JI YEON</au><au>HWANG JA YOUNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ANISOTROPIC CONDUCTIVE FILM AND THE SEMICONDUCTOR DEVICE USING THEREOF</title><date>2016-07-01</date><risdate>2016</risdate><abstract>본 발명은 전극간의 전극부에 압착되는 도전 입자 밀도 및 스페이스부의 도전 입자 밀도를 조절하여 쇼트를 방지할 수 있고, 원가 절감 효과 및 접속 특성이 향상된 이방성 도전 필름 및 이에 의해 접속된 반도체 장치에 관한 것이다.
The present invention relates to an anisotropic conductive film that can prevent a short circuit by adjusting density of conductive particles pressed to electrode parts between electrodes and density of conductive particles in a space between the electrodes and exhibit enhanced cost-reduction effects and connection characteristics, and a semiconductor device connected thereby.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng ; kor |
recordid | cdi_epo_espacenet_KR20160077039A |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | ANISOTROPIC CONDUCTIVE FILM AND THE SEMICONDUCTOR DEVICE USING THEREOF |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T12%3A01%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PARK%20KYOUNG%20SOO&rft.date=2016-07-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20160077039A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |