SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device comprises: a semiconductor substrate including active portions; first and second dopant regions formed in the active portions respectively; word lines crossing the active portions and...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	LEE, KI SEOK, JUNG, HYEON OK, HAN, SUNG HEE, PARK, CHAN HO, LEE, WON WOO, YOON, CHAN SIC
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device comprises: a semiconductor substrate including active portions; first and second dopant regions formed in the active portions respectively; word lines crossing the active portions and extended in a first direction; first and second bit lines crossing the word lines, extended in parallel in a second direction perpendicular to the first direction, and connected to the first dopant regions; and contact structures arranged between the word lines and between first and second bit lines respectively when viewed from a planar view, and contacting the second dopant regions. Therefore, the semiconductor device can improve electrical reliability. 반도체 장치 및 그 제조 방법에 관한 것이다. 활성부들을 포함하는 반도체 기판; 각각의 상기 활성부들 내에 형성된 제 1 및 제 2 불순물 영역들; 상기 활성부들을 가로질러 제 1 방향으로 연장되는 워드 라인들; 상기 워드 라인들을 가로질러 상기 제 1 방향 수직인 제 2 방향으로 나란히 연장되며, 상기 제 1 불순물 영역들과 접속되는 제 1 및 제 2 비트 라인들; 평면적 관점에서, 상기 워드 라인들 사이 및 상기 제 1 및 제 2 비트 라인들 사이에 각각 배치되며, 상기 제 2 불순물 영역들과 접촉하는 콘택 구조체들을 포함한다.