RESISTIVE MEMORY DEVICES

Provided is a resistive memory device having improved reliability. The resistive memory device comprises: a first electrode; a variable resistance material layer formed on the first electrode, and including a nitrogen-doped metal oxide (N_xMO_y), wherein 0.001

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Bibliographische Detailangaben
Hauptverfasser:	BAEK, IN GYU, LEE, SEUNG RYUL, MISHA SAIFUL HAQUE, HWANG, HYUN SANG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Provided is a resistive memory device having improved reliability. The resistive memory device comprises: a first electrode; a variable resistance material layer formed on the first electrode, and including a nitrogen-doped metal oxide (N_xMO_y), wherein 0.001