WAFER ROTATING APPARATUS
The present invention relates to a wafer rotating apparatus. The wafer rotating apparatus comprises: a base which is provided in a chemical vapor deposition device forming a thin film on a wafer and discharges a first operation gas and second operation gas; a susceptor which is provided at the upper...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The present invention relates to a wafer rotating apparatus. The wafer rotating apparatus comprises: a base which is provided in a chemical vapor deposition device forming a thin film on a wafer and discharges a first operation gas and second operation gas; a susceptor which is provided at the upper portion of the base, is rotated by the first operation gas, and guides the second operation gas; and a substrate placement member which is provided at the upper portion of the susceptor, on which the wafer is placed, and which is rotated by the second operation gas guided by the susceptor. Accordingly, it is possible to simplify a structure and to reduce the number of components.
본 발명은 웨이퍼회전장치에 관한 것으로서, 웨이퍼에 박막을 형성하는 화학기상증착장치의 내부에 구비되고, 제1 작동가스와 제2 작동가스를 토출하는 베이스; 상기 베이스의 상부에 구비되고, 상기 제1 작동가스에 의해 회전되며, 상기 제2 작동가스를 안내하는 서셉터; 및 상기 서셉터의 상부에 구비되고, 상기 웨이퍼가 안착되며, 상기 서셉터에 의해 안내된 상기 제2 작동가스에 의해 회전되는 기판안착부재;를 포함할 수 있다. 이에 의하여, 구조가 단순하고, 부품수가 감소될 수 있다. |
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