METHOD OF PRODUCIMG LAYER STRUCTURE, LAYER STRUCTURE, AND METHOD OF FORMING PATTERNS

Provided are a method for manufacturing a layer structure, a layer structure manufactured thereby, a method for forming a pattern using the layer structure, and a semiconductor device manufactured by the method for forming a pattern. The method for manufacturing a layer structure includes the steps...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KANG, SUN HAE, NAM, YOUN HEE, YOON, BYE RI, JEONG, SEUL GI, HONG, SEUNG HEE, YU, NAE RY, KIM, HEA JUNG, KIM, MIN SOO, KIM, YOUNG MIN, YI, SONG SE, BAEK, JAE YEOL, KIM, SUNG HWAN, HWANG, SUN MIN, JO, YEON HEE, KIM, SUNG MIN, LEE, CHUNG HEON, KIM, YUN JUN, SONG, HYUN JI, HWANG, WON JONG, YOON, YONG WOON, KIM, MYEONG KOO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Provided are a method for manufacturing a layer structure, a layer structure manufactured thereby, a method for forming a pattern using the layer structure, and a semiconductor device manufactured by the method for forming a pattern. The method for manufacturing a layer structure includes the steps of: (S1) forming a first organic layer by applying a first composition including an organic compound on a substrate having a plurality of patterns; (S2) removing part of the first organic layer by applying a solvent to the first organic layer; and (S3) forming a second organic layer by conducting a hardening process after applying a second composition including an organic compound on the first organic layer of which the part is removed. So, excellent planarization characteristics of the layer structure can be obtained without an etchback or chemical mechanical polishing process. 복수의 패턴을 가지는 기판 위에 유기 화합물을 포함하는 제1 조성물을 적용하여 제1 유기층을 형성하는 단계, 상기 제1 유기층에 용매를 적용하여 상기 제1 유기층 일부를 제거하는 단계; 일부가 제거된 상기 제1 유기층 위에 유기 화합물을 포함하는 제2 조성물을 적용한 후 경화 과정을 거쳐 제2 유기층을 형성하는 단계(S3)를 포함하는 막 구조물 제조 방법, 이에 따른 막 구조물, 상기 막 구조물을 이용한 패턴 형성 방법, 및 상기 패턴 형성 방법에 따라 제조되는 반도체 소자를 제공한다.