METHOD FOR MEASURING LEAKAGE CURRENT OF THIN FILM TRANSISTOR
The objective of the present invention is to provide a method for measuring a leakage current of a thin film transistor capable of accurately measuring a low leakage current. To achieve the objective, the method comprises: a step of connecting one end of a capacitor to a source electrode of the thin...
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Format: | Patent |
Sprache: | eng ; kor |
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