METHOD FOR MEASURING LEAKAGE CURRENT OF THIN FILM TRANSISTOR

The objective of the present invention is to provide a method for measuring a leakage current of a thin film transistor capable of accurately measuring a low leakage current. To achieve the objective, the method comprises: a step of connecting one end of a capacitor to a source electrode of the thin...

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Bibliographische Detailangaben
Hauptverfasser:	KIM, KI WOO, CHOI, YOON JI, KANG, JONG SEUK, LEE, KYUNG HO, BANG, HYUNG JIN, PARK, CHOONG KOO, SHIN, MIN HO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
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Beschreibung
Zusammenfassung:	The objective of the present invention is to provide a method for measuring a leakage current of a thin film transistor capable of accurately measuring a low leakage current. To achieve the objective, the method comprises: a step of connecting one end of a capacitor to a source electrode of the thin film transistor under an environment where a preset temperature is maintained, and of grounding the other end of the capacitor; a step of applying a drain voltage to a drain electrode of the thin film transistor and applying a gate voltage to a gate electrode of the thin film transistor; and a step of measuring the source voltage of the source electrode which changes over time in the gate voltage. 본 발명은, 낮은 누설전류도 정확하게 측정할 수 있는 박막트랜지스터의 누설전류 측정방법을 제공하기 위하여, 기 설정된 온도가 유지되는 환경에서 커패시터의 일단은 박막 트랜지스터의 소스전극과 연결시키고, 상기 커패시터의 타단은 접지시키는 단계; 상기 박막 트랜지스터의 드레인 전극에 드레인전압을 인가하고 상기 게이트전압을 상기 박막트랜지스터의 게이트전극에 인가하는 단계; 및 상기 게이트전압에서 시간에 따라 변화하는 상기 소스 전극의 소스전압을 측정하는 단계를 포함하는 박막트랜지스터의 누설전류 측정방법을 제공한다.