UV SENSOR AND METHOD OF MANUFACTURING THE SAME

Provided are an ultraviolet (UV) sensor and a method of manufacturing the same. The UV sensor comprises: a substrate; a first electrode positioned on the substrate; an insulator layer positioned on the first electrode and including an insulating material; an oxide semiconductor layer positioned on t...

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Bibliographische Detailangaben
Hauptverfasser:	KIM, MYEONG HO, CHOI, MYUNG JEA, CHOI, DUCK KYUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE TESTING
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Beschreibung
Zusammenfassung:	Provided are an ultraviolet (UV) sensor and a method of manufacturing the same. The UV sensor comprises: a substrate; a first electrode positioned on the substrate; an insulator layer positioned on the first electrode and including an insulating material; an oxide semiconductor layer positioned on the insulator layer and including an oxide semiconductor; and a second electrode positioned on the oxide semiconductor. The UV sensor has a rectifying characteristic between the insulator layer and the oxide semiconductor layer and uses a photocurrent change between the first and the second electrodes caused by UV irradiation. Therefore, the present invention can reduce off-current of the UV sensor by using a rectifying effect occurring between the oxide semiconductor layer and the insulator layer. UV 센서 및 그 제조방법을 제공한다. UV 센서는 기판, 상기 기판 상에 위치하는 제1 전극, 상기 제1 전극 상에 위치하되, 절연체 물질을 포함하는 절연체층, 상기 절연체층 상에 위치하되, 산화물 반도체를 포함하는 산화물 반도체층 및 상기 산화물 반도체층 상에 위치하는 제2 전극을 포함하고, 상기 절연체층과 상기 산화물 반도체층 사이에서 정류특성을 갖고, UV 조사에 따른 제1 전극 및 제2 전극 사이의 광전류 변화를 이용한다. 따라서, 산화물 반도체와 절연체층 사이에 일어나는 정류 효과를 이용하여, UV 센서의 off-current를 낮출 수 있다.