SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

The present invention relates to a semiconductor device and a manufacturing method thereof. More specifically, the present invention includes: a substrate to which an active pattern is provided; a gate electrode provided across the active pattern; and a gate capping structure on the gate electrode....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	JEON, TAEK SOO, KIM, WAN DON, JUNG, BYUNG SUK, KOO, KYUNG BUM, KIM, SHIN HYE, HYUN, SANG JIN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a semiconductor device and a manufacturing method thereof. More specifically, the present invention includes: a substrate to which an active pattern is provided; a gate electrode provided across the active pattern; and a gate capping structure on the gate electrode. The gate capping structure includes at least two gate capping patterns having different properties from each other, and therefore, contact plugs are effectively formed in a self-aligned manner while the operation speed and characteristics of the semiconductor device are improved. 본 발명은 반도체 장치 및 이의 제조 방법에 관한 것으로, 보다 구체적으로, 활성 패턴이 제공된 기판; 상기 활성 패턴을 가로지르는 게이트 전극; 및 상기 게이트 전극 상의 게이트 캡핑 구조체를 포함할 수 있다. 상기 게이트 캡핑 구조체는 서로 다른 특성을 갖는 2개 이상의 게이트 캡핑 패턴들을 포함하므로, 콘택 플러그들을 효과적으로 자기 정렬(self-align) 시킬 수 있음과 동시에 소자의 동작 속도 및 특성을 개선할 수 있다.