METAL GATE STACK HAVING TIALCN AS WORK FUNCTION LAYER AND/OR BLOCKING/WETTING LAYER

Disclosed are a metal gate stack having a titanium aluminum carbon nitride (TiAlCN) as a work function layer and/or a multi-functional blocking/wetting layer, and a method for manufacturing the same. In an embodiment, an integrated circuit device comprises: a semiconductor substrate; and a gate stac...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JENG CHICHERNG, LIU CHI WEN, JANGJIAN SHIU KO, WANG TINGCHUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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