SEMICONDUCTOR DEVICE

According to one embodiment of the present invention, a semiconductor device includes: a substrate; a first nitride semiconductor layer disposed on a first surface of the substrate; and a second nitride semiconductor layer disposed back to back with the first nitride semiconductor layer on a second surface of the substrate. The semiconductor device can be prevented from being bent convexly or concavely, so the semiconductor device can be flatly formed. In addition, the substrate of the semiconductor device can be formed to be thin, and production costs can be reduced. 실시 예의 반도체 소자는 기판과, 기판의 제1 면에 배치된 제1 질화물 반도체층 및 기판의 제2 면에서 제1 질화물 반도체층과 등을 맞대고 배치된 제2 질화물 반도체층을 포함한다.