PATTERNING METHOD USING METAL MASK, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE COMPRISING THE SAME PATTERNING METHOD

A technical idea of the present invention is to provide a patterning method using a metal mask, which can easily form a hole at a high aspect ratio, and a method for manufacturing a semiconductor device including the patterning method. The patterning method comprises the steps of: sequentially formi...

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Bibliographische Detailangaben
Hauptverfasser:	JEON, KYUNG YUB, KIM, DONG CHAN, HAN, JE WOO, MIN, GYUNG JIN, PARK, JAE HONG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A technical idea of the present invention is to provide a patterning method using a metal mask, which can easily form a hole at a high aspect ratio, and a method for manufacturing a semiconductor device including the patterning method. The patterning method comprises the steps of: sequentially forming a lower metal layer and an upper metal layer on a layer to be etched; forming an upper metal mask by patterning the upper metal layer; forming a lower metal mask by patterning the lower metal layer using the upper metal mask; and patterning the layer to be etched by using the upper metal mask. 본 발명의 기술적 사상은 높은 종횡비의 홀을 용이하게 형성할 수 있는 금속 마스크를 이용한 패터닝 방법 및 그 패터닝 방법을 포함한 반도체 소자 제조방법을 제공한다. 그 패터닝 방법은 식각 대상층 상에 하부 금속층과 상부 금속층을 순차적으로 형성하는 단계; 상기 상부 금속층을 패터닝하여 상부 금속 마스크를 형성하는 단계; 상기 상부 금속 마스크를 이용하여 상기 하부 금속층을 패터닝하여 하부 금속 마스크를 형성하는 단계; 및 상기 상부 금속 마스크를 이용하여 상기 식각 대상층을 패터닝하는 단계;를 포함한다.